Abstract

The ground state binding energy of hydrogenic impurity in a triple GaAs/AlxGa1-xAs quantum wellwire (QWW) system subjected to an external electric field applied perpendicular to the along axis of the wire system is studied. The valance subband energies and wave functions in the presence of an electric field are calculated using the fourth-order Runge-Kutta method. The variational method for the binding energy of hydrogenic impurity in a triple GaAs/AlxGa1-xAs QWW has been used. Binding energy calculations were performed as function of the wire thickness, the electric field and the impurity position. Numerical results for binding energy of hydrogenic impurity in a triple GaAs/AlxGa1-xAs QWW show a sharp decrease or increase, which may be important in device applications, under suitable conditions.